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hal114, hal115 hall effect sensor family edition dec. 20, 1999 6251-456-2ds micr onas micronas
hal11x 2 micronas contents page section title 3 1. introduction 3 1.1. features 3 1.2. family overview 3 1.3. marking code 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 4 2. functional description 5 3. specifications 5 3.1. outline dimensions 5 3.2. dimensions of sensitive area 5 3.3. positions of sensitive areas 6 3.4. absolute maximum ratings 6 3.5. recommended operating conditions 7 3.6. electrical characteristics 8 3.7. magnetic characteristics 10 4. type descriptions 10 4.1. hal114 12 4.2. hal115 14 5. application notes 14 5.1. application circuit 14 5.2. ambient temperature 14 5.3. extended operating conditions 14 5.4. start-up behavior 16 6. data sheet history
hal11x 3 micronas hall effect sensor family in cmos technology release notes: revision bars indicate significant changes to the previous edition. 1. introduction the hal 11x family consists of different hall switches produced in cmos technology. all sensors include a temperature-compensated hall plate, a comparator, and an open-drain output transistor. the comparator compares the actual magnetic flux through the hall plate (hall voltage) with the fixed refer- ence values (switching points). accordingly, the output transistor is switched on or off. the sensors of this family differ in the switching behavior. the sensors are designed for industrial and automotive applications and operate with supply voltages from 4.5 v to 24 v in the ambient temperature range from ?40 c up to 125 c. all sensors are available in an smd-package (sot-89b) and in a leaded version (to-92ua). 1.1. features ? operates from 4.5 v to 24 v supply voltage ? overvoltage protection ? reverse-voltage protection at v dd -pin ? short-circuit protected open-drain output by thermal shut down ? operates with static magnetic fields and dynamic mag- netic fields up to 20 khz ? stable switching points over a wide supply voltage range ? the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic characteristics 1.2. family overview the types differ according to the mode of switching. type switching behavior see page hal114 unipolar 10 hal115 bipolar 12 bipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not. unipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. 1.3. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. type temperature range k e c hal114 114k 114e 114c hal115 115k 115e 115c
hal11x 4 micronas 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). k: t j = ? 40 ? 40 ? 40 ? ordering codes for hall sensors ? . 1.6. solderability all packages: according to iec68-2-58 during soldering reflow processing and manual reworking, a component body temperature of 260 ? 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to ? 15 v. temperature dependent bias hysteresis control comparator output v dd 1 out 3 hall plate g nd 2 fig. 2?1: hal11x block diagram hal11x short circuit & overvoltage protection reverse voltage & overvoltage protection
hal11x 5 micronas 3. specifications 3.1. outline dimensions fig. 3 ? 1: plastic small outline transistor package (sot-89a) weight approximately 0.04 g dimensions in mm min. 0.25 4.55 note: the sot-89a package will be discontinued in 2000 and be replaced by the sot-89b package. fig. 3 ? 2: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm min. 0.25 2.55 fig. 3 ? 3: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm sensitive area 0.55 branded side 0.36 0.8 0.3 45 note: for all package diagrams, a mechanical tolerance of 3.2. dimensions of sensitive area 0.4 mm x 0.2 mm 3.3. positions of sensitive areas sot-89a sot-89b to-92ua |x 2 ? x 1 | / 2 < 0.2 mm y = 0.98 mm
hal11x 6 micronas 3.4. absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 28 1) v ? v p test voltage for supply 1 ? 24 2) ? v ? i dd reverse supply current 1 ? 50 1) ma i ddz, i oz current through protection devices 1 or 3 ? 200 3) 200 3) ma v o output voltage 3 ? 0.3 28 1) v i o continuous output on current 3 ? 30 1) ma i omax peak output on current 3 ? 250 3) ma t s storage temperature range ? 65 150 ? 40 150 ? ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the ? recommended operating conditions/characteristics ? of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 4.5 24 v i o continuous output on current 3 0 20 ma v o output voltage (output switched off) 3 0 24 v r v series resistor 1) 1 270 ? ? 1 on page 14
hal11x 7 micronas 3.6. electrical characteristics at t j = ? 40 symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 6 8.2 11 ma t j = 25 ? 120 400 mv i ol = 12.5 ma v ol output voltage over temperature range 3 ? 190 500 mv i ol = 20 ma i oh output leakage current 3 ? 0.06 1 ? ? 10 ? 6 10 ? 2 mt t r output rise time 3 ? 0.08 0.4 ? 0.06 0.4 ? ? 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 3 ? 4 r thja case to-92ua thermal resistance junction to soldering point ? ? 150 200 k/w fig. 3 ? 4: recommended pad size sot-89x dimensions in mm 5.0 2.0 2.0 1.0
hal11x 8 micronas 3.7. magnetic characteristics at t j = ? 40 sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal 114 ? 40 hal 115 ? 40 ? 10.7 1.4 12.5 ? 12.5 ? 1.4 10.7 1.8 2.8 7 mt bipolar 25 ? 10.7 1.2 12.5 ? 12.5 ? 1.2 10.7 1.8 2.4 7 mt 140 ? 10.7 0.9 12.5 ? 12.5 ? 0.9 10.7 1 1.8 7 mt note: for detailed descriptions of the individual types, see pages 10 and following. the magnetic limits given above refer to parts in the original packaging. mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. this behavior is a physical phenomenon and not a malfunction of the sensor. mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. please use a sensor of the hal 5xx family if higher robustness against mechanical stress is required. ? 15 ? 10 ? 5 0 5 10 15 ? 15 ? 10 ? 5 0 5 1015202530 v ma v dd i dd fig. 3 ? 5: typical supply current versus supply voltage t a = ? 40 fig. 3 ? 6: typical supply current versus supply voltage t a = ? 40
hal11x 9 micronas 0 2 4 6 8 10 12 ? 50 0 50 100 150 fig. 3 ? 7: typical supply current versus temperature hal 11x 0 100 200 300 400 500 0 5 10 15 20 25 30 v mv v dd v ol i o = 12.5 ma fig. 3 ? 8: typical output low voltage versus supply voltage t a = ? 40 ? 50 0 50 100 150 mv t a v ol i o = 12.5 ma i o = 20 ma fig. 3 ? 9: typical output low voltage versus temperature hal 11x ? 50 0 50 100 150 ? 1 10 ? 2 10 ? 3 10 ? 4 10 1 10 2 v oh = 24 v v dd = 5 v fig. 3 ? 10: typical output leakage current versus temperature hal 11x
hal114 10 micronas 4. type description 4.1. hal 114 the hal 114 is a unipolar switching sensor (see fig. 4 ? 1). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: ? switching type: unipolar ? typical b on : 21.1 mt at room temperature ? typical b off : 17.1 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 20 khz applications the hal 114 is the optimal sensor for applications with one magnetic polarity such as: ? solid state switches, ? contactless solution to replace micro switches, ? position and end-point detection, and ? rotating speed measurement. b hys output voltage fig. 4 ? 1: definition of magnetic switching points for the hal 114 0b off b on v ol v o b magnetic characteristics at t j = ? 40 parameter on point b on off point b off hysteresis b hys unit t j min. typ. max. min. typ. max. min. typ. max. ? 40 ? b off the magnetic limits given above refer to parts in the original packaging. mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. this behavior is a physical phenomenon and not a malfunction of the sensor. mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. please use a sensor of the hal 5xx family if a robustness against mechanical stress is required.
hal114 11 micronas 0 5 10 15 20 25 30 0 5 10 15 20 25 30 mt v dd v b on b off fig. 4 ? 2: typical magnetic switching points versus supply voltage t a = ? 40 fig. 4 ? 3: typical magnetic switching points versus supply voltage t a = ? 40 ? 50 0 50 100 150 b off mt t a b on b off b on v dd = 12 v fig. 4 ? 4: typical magnetic switching points versus temperature hal 114
hal115 12 micronas 4.2. hal 115 the hal 115 is a bipolar switching sensor (see fig. 4 ? 5). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: ? switching type: bipolar ? high sensitivity ? typical b on : 1.2 mt at room temperature ? typical b off : ? 1.2 mt at room temperature ? operates with static magnetic fields and dynamic mag- netic fields up to 20 khz applications the hal 115 is the optimal sensor for all applications with alternating magnetic signals at the sensor position such as: ? rotating speed measurement, ? commutation of brushless dc-motors and cooling fans. fig. 4 ? 5: definition of magnetic switching points for the hal115 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = ? 40 parameter on point b on off point b off hysteresis b hys unit t j min. typ. max. min. typ. max. min. typ. max. ? 40 ? 10.7 1.4 12.5 ? 12.5 ? 1.4 10.7 1.8 2.8 7 mt 25 ? 10.7 1.2 12.5 ? 12.5 ? 1.2 10.7 1.8 2.4 7 mt 100 ? 10.7 1 12.5 ? 12.5 ? 1 10.7 1.5 2 7 mt 140 ? 10.7 0.9 12.5 ? 12.5 ? 0.9 10.7 1 1.8 7 mt the hysteresis is the difference between the switching points b hys = b on ? b off the magnetic limits given above refer to parts in the original packaging. mechanical stress on the hall sensitive areas on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching points. this behavior is a physical phenomenon and not a malfunction of the sensor. mechanical stress on the hall plates can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering or operating the parts at extreme temperatures. please use a sensor of the hal 5xx family if higher robustness against mechanical stress is required.
hal115 13 micronas ? 6 ? 4 ? 2 0 2 4 6 ? 50 0 50 100 150 b off mt t a b on, b off fig. 4 ? 6: typical magnetic switching points versus ambient temperature
hal11x 14 micronas 5. application notes 5.1. application circuit the hal 11x sensors can operate without external com- ponents. for applications with disturbances on the sup- ply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 5 ? 1). the series resistor and the capacitor should be placed as closely as possible to the sensor. out gnd 3 2 1v dd 4.7 nf v dd r v 220 ? fig. 5 ? 1: recommended application circuit hal115 1 2 3 3.3 k r 1 l 1 r 2 3.3 k l 2 c 1 c 2 2.2 fig. 5 ? 2: recommended application circuit for dc fans 5.2. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + ? ? ? ? 5.3. extended operating conditions all sensors fulfill the electrical and magnetic characteris- tics when operated within the recommended operating conditions (see page 6). please use the sensors of the hal 5xx family if lower op- eration voltage, lower current consumption or tighter magnetic specifications required. 5.4. start-up behavior the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. this parameter t en(o) is specified in the electrical characteristics (see page 7). during the initialization time, the output state is not de- fined and can toggle. after t en(o) , the output will be low if the applied magnetic field b is above b on or high if b is below b off . for magnetic fields between b off and b on , the output state of the hal sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic field must be above b onmax , respectively, below b offmin .
hal11x 15 micronas
hal11x 16 micronas 6. data sheet history 1. final data sheet: ? hal114 unipolar hall switch ic ? , june 10, 1998, 6251-456-1ds. first release of the final data sheet. 2. final data sheet: ? hal115 hall effect sensor ic ? , may 7, 1997, 6251-414-1ds. first release of the final data sheet. 3. final data sheet: ? hal114, hal 115 hall effect sen- sor family, dec. 20, 1999, 6251-456-2ds. second re- lease of the final data sheet. major changes: ? additional package sot-89b ? temperature range ? a ? replaced by ? k ? for hal114 ? additional temperature range ? k ? for hal115 ? outline dimensions for sot-89a and to-92ua changed ? supply voltage range changed for hal115 micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany by systemdruck+verlags-gmbh, freiburg (12/1999) order no. 6251-456-2ds all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirma- tion form; the same applies to orders based on development samples delivered. by this publication, micronas gmbh does not assume re- sponsibility for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh.
micronas page 1 of 1 subject: data sheet concerned: supplement: edition: data sheet supplement changes: C position tolerance of the sensitive area reduced C tolerances of the outline dimensions reduced C thickness of the leadframe changed to 0.15 mm (old 0.125 mm) C sot-89a will be discontinued in december 2000 position of sensitive area note: a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. position tolerance of the sensitive area is defined in the package diagram. hal 114, 115 hal 50x, 51x hal 621, 629 hal 55x, hal 56x x center of the package center of the package y 0.95 mm nominal 0.85 mm nominal min. 0.25 2.55 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-5-a3/2e y 123 4 0.2 0.15 0.3 4.55 1.7 2 ? 0.2 sensitive area top view 1.15 improvement of sot-89b package hal 114, 115, 6251-456-2ds, dec. 20, 1999 hal 50x, 51x, 6251-485-1ds, feb. 16, 1999 hal 55x, 56x, 6251-425-1ds, april 6, 1999 hal 621, 629, 6251-504-1ds, feb. 3, 2000 no. 1/ 6251-531-1dss july 4, 2000 hal 11x, hal 5xx, hal 62x

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